| IPD50P04P4L11ATMA1 | ||
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| Product description : Single P-Channel 40 V 10.6 mOhm 45 nC OptiMOS™ Power Mosfet - DPAK | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
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| Width: | 6.22 mm |
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| Rds On - Drain-Source Resistance: | 8.2 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | - 1.7 V |
| Configuration: | Single |
| Unit Weight: | 0.139332 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 12 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | IPD50P04P4L-11 IPD50P04P4L11XT SP000671156 |
| RoHS: | Details |
| Id - Continuous Drain Current: | - 50 A |
| Rise Time: | 9 ns |
| Maximum Operating Temperature: | + 175 C |
| Packaging: | Reel |
| Qg - Gate Charge: | 45 nC |
| Pd - Power Dissipation: | 58 W |
| Package / Case: | TO-252-3 |
| Height: | 2.41 mm |
| Vgs - Gate-Source Voltage: | +/- 16 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 39 ns |
| Length: | 6.73 mm |
| Series: | XPD50P04 |
| Factory Pack Quantity: | 2500 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 46 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 40 V |
| Transistor Type: | 1 P-Channel |
| ECCN | EAR99 |
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