BSO303SP H specifications -Ameya360 electronic components purchase network

Packaging:	Reel
Qg - Gate Charge:	- 40 nC
Pd - Power Dissipation:	2.5 W
Tradename:	OptiMOS
Configuration:	Single
Unit Weight:	0.019048 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	10 ns
Manufacturer:	Infineon
Transistor Polarity:	P-Channel
Channel Mode:	Enhancement
Part # Aliases:	BSO303SPHXT BSO303SPHXUMA1 SP000613848
RoHS:	Details
Id - Continuous Drain Current:	- 9.1 A
Rise Time:	11 ns
Maximum Operating Temperature:	+ 150 C
Rds On - Drain-Source Resistance:	21 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	SOIC-8
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	SMD/SMT
Fall Time:	33 ns
Forward Transconductance - Min:	19 S
Series:	OptiMOS P
Factory Pack Quantity:	2500
Brand:	Infineon Technologies
Typical Turn-Off Delay Time:	42 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 30 V
Transistor Type:	1 P-Channel

Datasheet： BSO303SP H.pdf

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