IRF3710PBF specifications -Ameya360 electronic components purchase network


IRF3710PBF

ACTIVE TO-220AB
Product description : Single N-Channel 100 V 23 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3
SPQ：50
Datasheet : IRF3710PBF.pdf

FET Feature	Standard
Package / Case	TO-220-3
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	57A (Tc)
Product Training Modules	High Voltage Integrated Circuits (HVIC Gate Drivers)
Design Resources	IRF3710PBF Saber Model IRF3710PBF Spice Model
Series	HEXFET®
Mounting Type	Through Hole
Input Capacitance (Ciss) @ Vds	3130pF @ 25V
RoHS	Lead free / RoHS Compliant
Rds On (Max) @ Id, Vgs	23 mOhm @ 28A, 10V
Power - Max	200W
Supplier Device Package	TO-220AB
Gate Charge (Qg) @ Vgs	130nC @ 10V
FET Type	MOSFET N-Channel, Metal Oxide
Online Catalog	N-Channel Standard FETs
Family	FETs - Single
Vgs(th) (Max) @ Id	4V @ 250µA
Packaging	Tube

Datasheet： IRF3710PBF.pdf

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Stock code :	41261
Mfg name :	Infineon Technologies
MPN :	IRF3710PBF
Product description :	Single N-Channel 100 V 23 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3

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