| SI4900DY-T1-E3 | ||
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| 产品描述：
Dual N-Channel 60 V 0.058 Ohm Surface Mount TrenchFET Power Mosfet - SOIC-8
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| 标准包装：1 | ||
| 数据手册： |
- 规格参数
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| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A |
| FET Type | 2 N-Channel (Dual) |
| Series | TrenchFET® |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 665pF @ 15V |
| RoHS | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 58 mOhm @ 4.3A, 10V |
| Power - Max | 3.1W |
| Supplier Device Package | 8-SO |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Family | FETs - Arrays |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Packaging | Cut Tape (CT) |
| 数据手册： |
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