| IRLHS6342TRPBF | ||
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| Product description : Single N-Channel 30 V 19.5 mOhm 11 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm | ||
| SPQ：1 | ||
| Datasheet : |
- Specifications
- Product Attributes
- Documents
- Product reviews
| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | 6-PowerVDFN |
| Power - Max | 2.1W |
| Supplier Device Package | 6-PQFN (2x2) |
| Gate Charge (Qg) @ Vgs | 11nC @ 4.5V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Family | FETs - Single |
| Vgs(th) (Max) @ Id | 1.1V @ 10µA |
| Packaging | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 15.5 mOhm @ 8.5A, 4.5V |
| PCN Assembly/Origin | Mosfet Backend Wafer Processing 23/Oct/2013 |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Ta), 19A (Tc) |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below |
| Design Resources | IRLHS6342TR2PBF Saber Model IRLHS6342TR2PBF Spice Model |
| Series | HEXFET® |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 1019pF @ 25V |
| RoHS | Lead free / RoHS Compliant |
| Datasheet： |
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- Replacement Products
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- P2P:A direct drop-in replacement or second source option. Possible minor parametric differences. No change required in most designs.
- Functional Equivalent:A direct replacement or second source option. Possible major parametric differences. Changes may be required in some designs.
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