IRFB31N20DPBF specifications -Ameya360 electronic components purchase network


IRFB31N20DPBF

ACTIVE TO-220AB
Product description : 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
SPQ：1
Datasheet : IRFB31N20DPBF.pdf

FET Feature	Standard
Package / Case	TO-220-3
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Product Training Modules	High Voltage Integrated Circuits (HVIC Gate Drivers)
Design Resources	IRFB31N20DPBF Saber Model IRFB31N20DPBF Spice Model
Series	HEXFET®
Mounting Type	Through Hole
Input Capacitance (Ciss) @ Vds	2370pF @ 25V
RoHS	Lead free / RoHS Compliant
Rds On (Max) @ Id, Vgs	82 mOhm @ 18A, 10V
Power - Max	3.1W
Supplier Device Package	TO-220AB
Gate Charge (Qg) @ Vgs	107nC @ 10V
FET Type	MOSFET N-Channel, Metal Oxide
Online Catalog	N-Channel Standard FETs
Family	FETs - Single
Vgs(th) (Max) @ Id	5.5V @ 250µA
Packaging	Tube

Datasheet： IRFB31N20DPBF.pdf

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Stock code :	36736
Mfg name :	Infineon Technologies
MPN :	IRFB31N20DPBF
Product description :	200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

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