IRFB3307ZPBF specifications -Ameya360 electronic components purchase network


IRFB3307ZPBF

ACTIVE TO-220AB
Product description : Single N-Channel 75 V 5.8 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3
SPQ：1
Datasheet : IRFB3307ZPBF.pdf

FET Feature	Standard
Package / Case	TO-220-3
Power - Max	230W
Supplier Device Package	TO-220AB
Gate Charge (Qg) @ Vgs	110nC @ 10V
FET Type	MOSFET N-Channel, Metal Oxide
Online Catalog	N-Channel Standard FETs
Family	FETs - Single
Vgs(th) (Max) @ Id	4V @ 150µA
Packaging	Tube
Rds On (Max) @ Id, Vgs	5.8 mOhm @ 75A, 10V
PCN Assembly/Origin	Mosfet Backend Wafer Processing 23/Oct/2013 Qualification Wafer Source 01/Apr/2014
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Product Training Modules	High Voltage Integrated Circuits (HVIC Gate Drivers)
Design Resources	IRFB3307ZPBF Saber Model IRFB3307ZPBF Spice Model
Series	HEXFET®
Mounting Type	Through Hole
Input Capacitance (Ciss) @ Vds	4750pF @ 50V
RoHS	Lead free / RoHS Compliant

Datasheet： IRFB3307ZPBF.pdf

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Stock code :	35843
Mfg name :	Infineon Technologies
MPN :	IRFB3307ZPBF
Product description :	Single N-Channel 75 V 5.8 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3

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