SIS612EDNT-T1-GE3 specifications -Ameya360 electronic components purchase network


SIS612EDNT-T1-GE3

ACTIVE PowerPAK® 1212-8 EAR99
Product description : N-Channel 20 V 0.0039 Ω 52 W TrenchFET Power Mosfet - Thin PowerPAK-1212-8
SPQ：1
Datasheet : SIS612EDNT-T1-GE3.pdf

FET Feature	Standard
Package / Case	PowerPAK® 1212-8
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Part Status	Active
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Vgs(th) (Max) @ Id	1.2V @ 1mA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Tape & Reel (TR)
Rds On (Max) @ Id, Vgs	3.9 mOhm @ 14A, 4.5V
Power - Max	52W
Supplier Device Package	PowerPAK® 1212-8
Gate Charge (Qg) @ Vgs	70nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	2060pF @ 10V
ECCN	EAR99

Datasheet： SIS612EDNT-T1-GE3.pdf

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Stock code :	3583057
Mfg name :	Vishay
MPN :	SIS612EDNT-T1-GE3
Product description :	N-Channel 20 V 0.0039 Ω 52 W TrenchFET Power Mosfet - Thin PowerPAK-1212-8

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