IRFB3206GPBF specifications -Ameya360 electronic components purchase network


IRFB3206GPBF

ACTIVE TO-220AB
Product description : Single N-Channel 60 V 3 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3
SPQ：1
Datasheet : IRFB3206GPBF.pdf

FET Feature	Standard
Package / Case	TO-220-3
Power - Max	300W
Supplier Device Package	TO-220AB
Gate Charge (Qg) @ Vgs	170nC @ 10V
FET Type	MOSFET N-Channel, Metal Oxide
Series	HEXFET®
Mounting Type	Through Hole
Input Capacitance (Ciss) @ Vds	6540pF @ 50V
RoHS	Lead free / RoHS Compliant
Rds On (Max) @ Id, Vgs	3 mOhm @ 75A, 10V
PCN Assembly/Origin	Mosfet Backend Wafer Processing 23/Oct/2013
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Product Training Modules	High Voltage Integrated Circuits (HVIC Gate Drivers)
Online Catalog	N-Channel Standard FETs
Family	FETs - Single
Vgs(th) (Max) @ Id	4V @ 150µA
Packaging	Tube

Datasheet： IRFB3206GPBF.pdf

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Stock code :	32901
Mfg name :	Infineon Technologies
MPN :	IRFB3206GPBF
Product description :	Single N-Channel 60 V 3 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3

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