| PMV48XPAR | ||
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| Product description : Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -14A | ||
| SPQ：1 | ||
| Datasheet : |
- Specifications
- Product Attributes
- Documents
- Product reviews
| Packaging: | Reel |
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| Qg - Gate Charge: | 11 nC |
| Pd - Power Dissipation: | 930 mW |
| Package / Case: | TO-236AB-3 |
| Configuration: | 1 P-Channel |
| Mounting Style: | SMD/SMT |
| Fall Time: | 23 ns |
| Forward Transconductance - Min: | 12 S |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 61 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 20 V |
| Transistor Type: | 1 P-Channel |
| ECCN | ECL99 |
| Rds On - Drain-Source Resistance: | 48 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | - 1.25 V |
| Vgs - Gate-Source Voltage: | 12 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 11 ns |
| Manufacturer: | NXP |
| Factory Pack Quantity: | 3000 |
| Brand: | NXP Semiconductors |
| RoHS: | Details |
| Id - Continuous Drain Current: | - 3.5 A |
| Rise Time: | 13 ns |
| Maximum Operating Temperature: | + 150 C |
| Datasheet： |
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- Replacement Products
- Associated Product
- P2P:A direct drop-in replacement or second source option. Possible minor parametric differences. No change required in most designs.
- Functional Equivalent:A direct replacement or second source option. Possible major parametric differences. Changes may be required in some designs.
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