2N5550TFR specifications -Ameya360 electronic components purchase network


2N5550TFR

ACTIVE EAR99
Product description : 2N5550 Series 140 V 600 mA NPN Epitaxial Silicon Transistor - TO-92-3
SPQ：2000
Datasheet : 2N5550TFR.pdf

Collector- Base Voltage VCBO:	160 V
Collector-Emitter Saturation Voltage:	0.25 V
Minimum Operating Temperature:	- 55 C
Package / Case:	TO-92-3 Kinked Lead
Gain Bandwidth Product fT:	300 MHz
Unit Weight:	0.008466 oz
Emitter- Base Voltage VEBO:	6 V
DC Current Gain hFE Max:	250
Length:	4.7 mm
Manufacturer:	Fairchild Semiconductor
Factory Pack Quantity:	2000
Part # Aliases:	2N5550TFR_NL
Product Category:	Bipolar Transistors - BJT
Maximum Operating Temperature:	+ 150 C
Width:	3.93 mm
Packaging:	Reel
Pd - Power Dissipation:	625 mW
Height:	4.7 mm
Configuration:	Single
Mounting Style:	Through Hole
Maximum DC Collector Current:	0.6 A
Continuous Collector Current:	0.6 A
DC Collector/Base Gain hfe Min:	60
Transistor Polarity:	NPN
Brand:	Fairchild Semiconductor
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	140 V
ECCN	EAR99

Datasheet： 2N5550TFR.pdf

You can comment after logging in.

Please inform us of the error for improving our site and products.

Stock code :	322435
Mfg name :	onsemi
MPN :	2N5550TFR
Product description :	2N5550 Series 140 V 600 mA NPN Epitaxial Silicon Transistor - TO-92-3

Type of Error

	Product description/Specifications
	Image
	Data sheet
	Search
	Associated/Alternative Product
	Prices
	Other

Explanation (Character Limit: 500)

Name:

Email(We may contact you about this problem.)

placeholder

PART	Quantity*	Target Price
	Quantity MOQ:	Target Price $ If not sure, you may skip this
remark

placeholder

PART	Quantity*	Target Price	Expected LeadTime
	Quantity	Target Price $ If not sure, you may skip this	Expected LeadTime If not sure, you may skip this
remark

Please enter the verification code in the image below：