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| 产品描述：
50V Dual Bipolar Digital Transistor
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300碌A, 10mA |
|---|---|
| PCN Assembly/Origin | Wafer Source Addition 26/Nov/2014 |
| Power - Max | 500mW |
| Resistor - Emitter Base (R2) (Ohms) | 22k |
| Standard Package | 4,000 |
| Packaging | Tape & Reel (TR) |
| Family | Transistors (BJT) - Arrays, Pre-Biased |
| Current - Collector Cutoff (Max) | 500nA |
| Resistor - Base (R1) (Ohms) | 22k |
| Package / Case | SOT-563, SOT-666 |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Supplier Device Package | SOT-563 |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Mounting Type | Surface Mount |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
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