IXTR200N10P specifications -Ameya360 electronic components purchase network


IXTR200N10P

ACTIVE ISOPLUS247™ EAR99
Product description : Transistor: N-MOSFET; Polar™; unipolar; 100V; 120A; 300W; 100ns
SPQ：1
Datasheet : IXTR200N10P.pdf

FET Feature	Standard
Package / Case	ISOPLUS247™
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Gate Charge (Qg) @ Vgs	235nC @ 10V
FET Type	MOSFET N-Channel, Metal Oxide
Family	FETs - Single
Mounting Type	Through Hole
ECCN	EAR99
Rds On (Max) @ Id, Vgs	8 mOhm @ 60A, 10V
Power - Max	300W
Supplier Device Package	ISOPLUS247™
Standard Package	30
Packaging	Tube
Series	HiPerFET™, PolarP2™
Vgs(th) (Max) @ Id	5V @ 500µA
Input Capacitance (Ciss) @ Vds	7600pF @ 25V

Datasheet： IXTR200N10P.pdf

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Stock code :	2788529
Mfg name :	IXYS Corporation
MPN :	IXTR200N10P
Product description :	Transistor: N-MOSFET; Polar™; unipolar; 100V; 120A; 300W; 100ns

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