IRF2804STRRPBF
  • ACTIVE
  • D2PAK
  • EAR99
Product description : Single N-Channel 40 V 2 mOhm 160nC HEXFET® Power Mosfet - D2PAK
SPQ:1
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FET Feature Standard
PCN Assembly/Origin Backend Wafer Transfer 23/Oct/2013
Power - Max 300W
Supplier Device Package D2PAK
Standard Package   800
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below
FET Type MOSFET N-Channel, Metal Oxide
Family FETs - Single
Mounting Type Surface Mount
ECCN EAR99
Rds On (Max) @ Id, Vgs 2 mOhm @ 75A, 10V
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Gate Charge (Qg) @ Vgs 240nC @ 10V
Packaging   Tape & Reel (TR)  
Series HEXFET®
Vgs(th) (Max) @ Id 4V @ 250µA
Input Capacitance (Ciss) @ Vds 6450pF @ 25V
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