IPI65R190C6 specifications -Ameya360 electronic components purchase network


IPI65R190C6

ACTIVE PG-TO262-3
Product description : MOSFET N-CH 650V 20.2A TO262
SPQ：500
Datasheet : IPI65R190C6.pdf

FET Feature	Standard
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	20.2A (Tc)
Gate Charge (Qg) @ Vgs	73nC @ 10V
FET Type	MOSFET N-Channel, Metal Oxide
Family	FETs - Single
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	190 mOhm @ 7.3A, 10V
Power - Max	151W
Supplier Device Package	PG-TO262-3
Standard Package	500
Packaging	Tube
Series	CoolMOS™
Vgs(th) (Max) @ Id	3.5V @ 730µA
Input Capacitance (Ciss) @ Vds	1620pF @ 100V

Datasheet： IPI65R190C6.pdf

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P2P:A direct drop-in replacement or second source option. Possible minor parametric differences. No change required in most designs.
Functional Equivalent:A direct replacement or second source option. Possible major parametric differences. Changes may be required in some designs.
Contain: The functions that one IC can achieve contain the functions that another IC can achieve.
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