IPI040N06N3 G specifications -Ameya360 electronic components purchase network


IPI040N06N3 G

ACTIVE PG-TO262-3
Product description : MOSFET N-CH 60V 90A TO262-3
SPQ：500
Datasheet : IPI040N06N3 G.pdf

FET Feature	Standard
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Gate Charge (Qg) @ Vgs	98nC @ 10V
FET Type	MOSFET N-Channel, Metal Oxide
Family	FETs - Single
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	4 mOhm @ 90A, 10V
Power - Max	188W
Supplier Device Package	PG-TO262-3
Standard Package	500
Packaging	Tube
Series	OptiMOS™
Vgs(th) (Max) @ Id	4V @ 90µA
Input Capacitance (Ciss) @ Vds	11000pF @ 30V

Datasheet： IPI040N06N3 G.pdf

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