IRFB4019PBF
  • ACTIVE
  • TO-220AB
Product description : Single N-Channel 150 V 95 mOhm 13 nC HEXFET® Power Mosfet - TO-220-3
SPQ:1
Datasheet :
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FET Feature Standard
Package / Case TO-220-3
Power - Max 80W
Supplier Device Package TO-220AB
Gate Charge (Qg) @ Vgs 20nC @ 10V
FET Type MOSFET N-Channel, Metal Oxide
Family FETs - Single
Vgs(th) (Max) @ Id 4.9V @ 50µA
Packaging Tube  
Rds On (Max) @ Id, Vgs 95 mOhm @ 10A, 10V
PCN Assembly/Origin Mosfet Backend Wafer Processing 23/Oct/2013
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
Online Catalog N-Channel Standard FETs
Mounting Type Through Hole
Input Capacitance (Ciss) @ Vds 800pF @ 50V
RoHS Lead free / RoHS Compliant
Datasheet:
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