IRFH5250DTRPBF specifications -Ameya360 electronic components purchase network


IRFH5250DTRPBF

ACTIVE PQFN (5x6) Single Die
Product description : Single N-Channel 25 V 1.4 mOhm 39 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
SPQ：1
Datasheet : IRFH5250DTRPBF.pdf

FET Feature	Logic Level Gate
Package / Case	8-PowerVQFN
Power - Max	3.6W
Supplier Device Package	PQFN (5x6) Single Die
Gate Charge (Qg) @ Vgs	83nC @ 10V
FET Type	MOSFET N-Channel, Metal Oxide
Online Catalog	N-Channel Logic Level Gate FETs
Family	FETs - Single
Vgs(th) (Max) @ Id	2.35V @ 150µA
Packaging	Tape & Reel (TR)
Rds On (Max) @ Id, Vgs	1.4 mOhm @ 50A, 10V
PCN Assembly/Origin	Backend Wafer Transfer 23/Oct/2013 Additional Assembly Site 23/Jul/2014
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	40A (Ta), 100A (Tc)
Product Training Modules	High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below
Design Resources	IRFH5250DTR2PBF Saber Model IRFH5250DTR2PBF Spice Model
Series	HEXFET®
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	6115pF @ 13V
RoHS	Lead free / RoHS Compliant

Datasheet： IRFH5250DTRPBF.pdf

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Stock code :	25735
Mfg name :	Infineon Technologies
MPN :	IRFH5250DTRPBF
Product description :	Single N-Channel 25 V 1.4 mOhm 39 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

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