2N5551RL1G specifications -Ameya360 electronic components purchase network


2N5551RL1G

ACTIVE TO-92-3
Product description : NPN Silicon Amplifier Transistor
SPQ：1
Datasheet : --

Vce Saturation (Max) @ Ib, Ic	200mV @ 5mA, 50mA
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PCN Obsolescence/ EOL	Multiple Devices 08/Nov/2014 Multiple Devices Revision 26/Nov/2014
Supplier Device Package	TO-92-3
Online Catalog	NPN Transistors
Family	Transistors (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
RoHS	Lead free / RoHS Compliant
Frequency - Transition	300MHz
Power - Max	625mW
Transistor Type	NPN
Current - Collector (Ic) (Max)	600mA
Voltage - Collector Emitter Breakdown (Max)	160V
Mounting Type	Through Hole
Packaging	Tape & Reel (TR)

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Stock code :	23345
Mfg name :	onsemi
MPN :	2N5551RL1G
Product description :	NPN Silicon Amplifier Transistor

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