| Packaging: | Tube |
|---|---|
| Qg - Gate Charge: | 85 nC |
| Pd - Power Dissipation: | 170 W |
| Package / Case: | TO-220-5 |
| Configuration: | Single |
| Unit Weight: | 0.105822 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 15 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | BTS244Z E3043 SP000969782 |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 55 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 13 mOhms |
| Minimum Operating Temperature: | - 40 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 1.6 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | Through Hole |
| Fall Time: | 25 ns |
| Forward Transconductance - Min: | 25 S |
| Series: | BTS244 |
| Factory Pack Quantity: | 500 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 40 ns |
| Id - Continuous Drain Current: | 19 A |
| Rise Time: | 70 ns |
| Maximum Operating Temperature: | + 175 C |
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