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| 产品描述：
Single N-Channel 100 V 15 mOhm 26 nC OptiMOS™ Power Mosfet - TSDSON-8
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| 标准包装：1 | ||
| 数据手册： |
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| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | 8-PowerTDFN |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Vgs(th) (Max) @ Id | 2.1V @ 33µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Cut Tape (CT) |
| Rds On (Max) @ Id, Vgs | 15 mOhm @ 20A, 10V |
| Power - Max | 2.1W |
| Supplier Device Package | PG-TSDSON-8 (3.3x3.3) |
| Gate Charge (Qg) @ Vgs | 35nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 2500pF @ 50V |
| ECCN | EAR99 |
| 数据手册： |
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