SIHP12N60E-E3
  • 量产中
  • EAR99
产品描述:
E-Series N-Channel 600 V 0.38 Ω 58 nC Flange Mount Power Mosfet - TO-220AB
标准包装:1
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Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 380 mOhms
Pd - Power Dissipation: 147 W
Tradename: TrenchFET
Configuration: Single
Unit Weight: 0.211644 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 14 nS
Manufacturer: Vishay
Transistor Polarity: N-Channel
Brand: Vishay Semiconductors
RoHS:  Details
Id - Continuous Drain Current: 12 A
Rise Time: 19 ns
Transistor Type: 1 N-Channel
ECCN EAR99
Qg - Gate Charge: 29 nC
Packaging: Tube
Technology: Si
Package / Case: TO-220-3
Vgs - Gate-Source Voltage: 20 V
Mounting Style: Through Hole
Fall Time: 19 ns
Forward Transconductance - Min: 3.8 S
Series: E
Factory Pack Quantity: 1000
Typical Turn-Off Delay Time: 35 nS
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 600 V
Type: E Series Power MOSFET
Maximum Operating Temperature: + 150 C
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