MJE170G specifications -Ameya360 electronic components purchase network


MJE170G

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Product description : Complementary Plastic Silicon Power Transistors
SPQ：1
Datasheet : MJE170G.pdf

Packaging:	Bulk
Width:	2.66 mm (Max)
Minimum Operating Temperature:	- 65 C
Package / Case:	TO-225-3
Gain Bandwidth Product fT:	50 MHz
Mounting Style:	Through Hole
Maximum DC Collector Current:	3 A
Continuous Collector Current:	3 A
Manufacturer:	ON Semiconductor
Transistor Polarity:	PNP
Brand:	ON Semiconductor
Product Category:	Bipolar Transistors - BJT
Maximum Operating Temperature:	+ 150 C
Collector- Base Voltage VCBO:	60 V
Collector-Emitter Saturation Voltage:	1.7 V
Pd - Power Dissipation:	1.5 W
Height:	11.04 mm (Max)
Configuration:	Single
Emitter- Base Voltage VEBO:	7 V
Length:	7.74 mm (Max)
DC Collector/Base Gain hfe Min:	50
Series:	MJE171
Factory Pack Quantity:	500
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	40 V

Datasheet： MJE170G.pdf

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Stock code :	214093
Mfg name :	onsemi
MPN :	MJE170G
Product description :	Complementary Plastic Silicon Power Transistors

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