IRF7379TRPBF specifications -Ameya360 electronic components purchase network


IRF7379TRPBF

ACTIVE 8-SO EAR99
Product description : IRF7379 Series 30 V 0.045 Ohm N and P-Channel HEXFET® Power MOSFET - SOIC-8
SPQ：4000
Datasheet : IRF7379TRPBF.pdf

Power - Max	2.5W
Rds On (Max) @ Id, Vgs	45 mOhm @ 5.8A, 10V
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	5.8A, 4.3A
Part Status	Active
Manufacturer	Infineon Technologies
Series	HEXFET®
Vgs(th) (Max) @ Id	1V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Tape & Reel (TR)
Package / Case	8-SOIC (0.154", 3.90mm Width)
FET Feature	Standard
Supplier Device Package	8-SO
Gate Charge (Qg) @ Vgs	25nC @ 10V
Category	Discrete Semiconductor Products
FET Type	N and P-Channel
Family	Transistors - FETs, MOSFETs - Arrays
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	520pF @ 25V
ECCN	EAR99

Datasheet： IRF7379TRPBF.pdf

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Stock code :	213642
Mfg name :	Infineon Technologies
MPN :	IRF7379TRPBF
Product description :	IRF7379 Series 30 V 0.045 Ohm N and P-Channel HEXFET® Power MOSFET - SOIC-8

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