MJE2955T specifications -Ameya360 electronic components purchase network


MJE2955T

ACTIVE EAR99
Product description : MJE2955T Series PNP 60 V 10 A Complementary Silicon Power Transistor - TO-220
SPQ：50
Datasheet : MJE2955T.pdf

Packaging:	Tube
Width:	4.6 mm (Max)
Minimum Operating Temperature:	- 55 C
Package / Case:	TO-220-3
Gain Bandwidth Product fT:	2 MHz
Unit Weight:	0.211644 oz
Emitter- Base Voltage VEBO:	5 V
DC Current Gain hFE Max:	70
Length:	10.4 mm (Max)
Manufacturer:	STMicroelectronics
Transistor Polarity:	PNP
Brand:	STMicroelectronics
Product Category:	Bipolar Transistors - BJT
Maximum Operating Temperature:	+ 150 C
Collector- Base Voltage VCBO:	70 V
Collector-Emitter Saturation Voltage:	1.1 V
Pd - Power Dissipation:	75 W
Height:	9.15 mm (Max)
Configuration:	Single
Mounting Style:	Through Hole
Maximum DC Collector Current:	10 A
Continuous Collector Current:	10 A
DC Collector/Base Gain hfe Min:	20
Series:	500V Transistors
Factory Pack Quantity:	1000
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	60 V
ECCN	EAR99

Datasheet： MJE2955T.pdf

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Stock code :	211809
Mfg name :	onsemi
MPN :	MJE2955T
Product description :	MJE2955T Series PNP 60 V 10 A Complementary Silicon Power Transistor - TO-220

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