IRFP3206PBF specifications -Ameya360 electronic components purchase network


IRFP3206PBF

ACTIVE EAR99
Product description : Single N-Channel 60 V 3 mOhm 120 nC HEXFET® Power Mosfet - TO-247-3AC
SPQ：1
Datasheet : IRFP3206PBF.pdf

Qg - Gate Charge:	120 nC
Packaging:	Tube
Manufacturer:	Infineon
Transistor Polarity:	N-Channel
Technology:	Si
RoHS:	Details
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	20 V
Transistor Type:	1 N-Channel
ECCN	EAR99
Rds On - Drain-Source Resistance:	2.4 mOhms
Number of Channels:	1 Channel
Pd - Power Dissipation:	280 W
Factory Pack Quantity:	25
Brand:	Infineon Technologies
Package / Case:	TO-247-3
Id - Continuous Drain Current:	200 A
Configuration:	Single Dual Drain
Unit Weight:	1.340411 oz
Mounting Style:	Through Hole

Datasheet： IRFP3206PBF.pdf

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Stock code :	211329
Mfg name :	Infineon Technologies
MPN :	IRFP3206PBF
Product description :	Single N-Channel 60 V 3 mOhm 120 nC HEXFET® Power Mosfet - TO-247-3AC

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