NTHD3100CT1G specifications -Ameya360 electronic components purchase network


NTHD3100CT1G

ACTIVE EAR99
Product description : N&P-Channel 20 V 80 mOhm 2.3 nC 1.1 W SMT Power Mosfet - ChipFET-8
SPQ：1
Datasheet : NTHD3100CT1G.pdf

Rds On - Drain-Source Resistance:	77 mOhms, 85 mOhms
Width:	1.65 mm
Minimum Operating Temperature:	- 55 C
Technology:	Si
Height:	1.05 mm
Vgs - Gate-Source Voltage:	12 V, 8 V
Mounting Style:	SMD/SMT
Fall Time:	10.7 ns, 11.7 ns
Length:	3.05 mm
Manufacturer:	ON Semiconductor
Transistor Polarity:	N-Channel, P-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	9.6 ns, 16 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	20 V
Type:	MOSFET
Maximum Operating Temperature:	+ 150 C
Packaging:	Reel
Product:	MOSFET Small Signal
Pd - Power Dissipation:	1.1 W
Package / Case:	ChipFET-8
Configuration:	N-Channel, P-Channel
Unit Weight:	0.002998 oz
Number of Channels:	2 Channel
Typical Turn-On Delay Time:	6.3 ns, 5.8 ns
Forward Transconductance - Min:	6 S, 8 S
Series:	NTHD3100C
Factory Pack Quantity:	3000
Brand:	ON Semiconductor
RoHS:	Details
Id - Continuous Drain Current:	3.9 A
Rise Time:	10.7 ns, 11.7 ns
Transistor Type:	1 N-Channel, 1 P-Channel
ECCN	EAR99

Datasheet： NTHD3100CT1G.pdf

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Stock code :	207683
Mfg name :	onsemi
MPN :	NTHD3100CT1G
Product description :	N&P-Channel 20 V 80 mOhm 2.3 nC 1.1 W SMT Power Mosfet - ChipFET-8

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