DMN6066SSD-13 specifications -Ameya360 electronic components purchase network


DMN6066SSD-13

ACTIVE EAR99
Product description : DMN6066SSD Series 60 V 66 mOhm Dual N-Channel Enhancement Mode Mosfet - SOIC-8
SPQ：1
Datasheet : DMN6066SSD-13.pdf

Qg - Gate Charge:	5.4 nC
Packaging:	Reel
Minimum Operating Temperature:	- 55 C
Technology:	Si
Configuration:	Dual
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Manufacturer:	Diodes Incorporated
Transistor Polarity:	N-Channel
Brand:	Diodes Incorporated
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	60 V
Maximum Operating Temperature:	+ 150 C
Rds On - Drain-Source Resistance:	48 mOhms
Product:	MOSFET Small Signal
Pd - Power Dissipation:	1.25 W
Package / Case:	SOIC-8
Vgs - Gate-Source Voltage:	20 V
Unit Weight:	0.002610 oz
Forward Transconductance - Min:	19.2 S
Series:	DMN60
Factory Pack Quantity:	2500
RoHS:	Details
Id - Continuous Drain Current:	3.3 A
Transistor Type:	2 N-Channel
ECCN	EAR99

Datasheet： DMN6066SSD-13.pdf

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Stock code :	205836
Mfg name :	Diodes Incorporated
MPN :	DMN6066SSD-13
Product description :	DMN6066SSD Series 60 V 66 mOhm Dual N-Channel Enhancement Mode Mosfet - SOIC-8

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