SIHB12N60E-GE3 specifications -Ameya360 electronic components purchase network


SIHB12N60E-GE3

ACTIVE D2PAK EAR99
Product description : E-Series N-Channel 600 V 147 W 0.38 Ω 58 nC Surface Mount Power Mosfet - D2PAK
SPQ：500
Datasheet : SIHB12N60E-GE3.pdf

Power - Max	147W
Rds On (Max) @ Id, Vgs	380 mOhm @ 6A, 10V
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Part Status	Active
Manufacturer	Vishay Siliconix
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	937pF @ 100V
ECCN	EAR99
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FET Feature	Standard
Supplier Device Package	D2PAK
Gate Charge (Qg) @ Vgs	58nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Bulk

Datasheet： SIHB12N60E-GE3.pdf

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Stock code :	205237
Mfg name :	Vishay
MPN :	SIHB12N60E-GE3
Product description :	E-Series N-Channel 600 V 147 W 0.38 Ω 58 nC Surface Mount Power Mosfet - D2PAK

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