2SB1302S-TD-E specifications -Ameya360 electronic components purchase network


2SB1302S-TD-E

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Product description : -20V,-5A,Low VCE(sat) PNP Transistor
SPQ：1000
Datasheet : 2SB1302S-TD-E.pdf

DC Current Gain hFE Max:	280
Emitter- Base Voltage VEBO:	- 5 V
Packaging:	Reel
Continuous Collector Current:	- 5 A
Manufacturer:	ON Semiconductor
Pd - Power Dissipation:	1.3 W
Factory Pack Quantity:	1000
RoHS:	Details
Product Category:	Bipolar Transistors - BJT
Gain Bandwidth Product fT:	320 MHz
Mounting Style:	SMD/SMT
Collector-Emitter Saturation Voltage:	- 250 mV
Maximum DC Collector Current:	- 8 A
Collector- Base Voltage VCBO:	- 25 V
DC Collector/Base Gain hfe Min:	140
Series:	2SB1302
Transistor Polarity:	PNP
Brand:	ON Semiconductor
Package / Case:	PCP-3
Collector- Emitter Voltage VCEO Max:	- 20 V
Configuration:	Single
Maximum Operating Temperature:	+ 150 C

Datasheet： 2SB1302S-TD-E.pdf

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