IPB60R160C6 specifications -Ameya360 electronic components purchase network


IPB60R160C6

ACTIVE PG-TO263-2
Product description : 600V,23.8A,N channel Power MOSFET
SPQ：1
Datasheet : IPB60R160C6.pdf

Power - Max	176W
Rds On (Max) @ Id, Vgs	160 mOhm @ 11.3A, 10V
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	23.8A (Tc)
Part Status	Active
Manufacturer	Infineon Technologies
Series	CoolMOS™
Vgs(th) (Max) @ Id	3.5V @ 750µA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Tape & Reel (TR)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FET Feature	Standard
Supplier Device Package	PG-TO263-2
Gate Charge (Qg) @ Vgs	75nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	1660pF @ 100V

Datasheet： IPB60R160C6.pdf

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