FDN338P
  • ACTIVE
  • 3-SSOT
Product description : Hong Kong
SPQ:1
Datasheet :
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FET Feature Logic Level Gate
Package / Case TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
PCN Packaging Binary Year Code Marking 15/Jan/2014
Product Training Modules High Voltage Switches for Power Processing SMPS Power Switch
Online Catalog P-Channel Logic Level Gate FETs
Family FETs - Single
Vgs(th) (Max) @ Id 1.5V @ 250µA
Packaging Tape & Reel (TR)  
Rds On (Max) @ Id, Vgs 115 mOhm @ 1.6A, 4.5V
Power - Max 460mW
Supplier Device Package 3-SSOT
Gate Charge (Qg) @ Vgs 6.2nC @ 4.5V
PCN Design/Specification Mold Compound 08/April/2008
FET Type MOSFET P-Channel, Metal Oxide
Series PowerTrench®
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 451pF @ 10V
RoHS Lead free / RoHS Compliant
Datasheet:
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