STN1HNK60
  • ACTIVE
  • EAR99
Product description : N-Channel 600 V 10 nC Surface Mount SuperMESH Power MosFet - SOT-223
SPQ:1
Datasheet : --
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Qg - Gate Charge: 7 nC
Packaging: Reel
Minimum Operating Temperature: - 55 C
Technology: Si
Height: 1.8 mm
Vgs - Gate-Source Voltage: 30 V
Mounting Style: SMD/SMT
Fall Time: 25 ns
Length: 6.5 mm
Series: N-channel MDmesh
Factory Pack Quantity: 4000
Brand: STMicroelectronics
RoHS:  Details
Id - Continuous Drain Current: 400 mA
Rise Time: 5 ns
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 8.5 Ohms
Width: 3.5 mm
Pd - Power Dissipation: 3.3 W
Package / Case: SOT-223-3
Configuration: Single Dual Drain
Unit Weight: 0.008826 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 6.5 ns
Manufacturer: STMicroelectronics
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 19 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 600 V
Transistor Type: 1 N-Channel
ECCN EAR99
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