NGTB40N120IHRWG specifications -Ameya360 electronic components purchase network


NGTB40N120IHRWG

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Product description : 1200V,40A,IGBT FS2-RC Induction Heating
SPQ：1
Datasheet : NGTB40N120IHRWG.pdf

Collector-Emitter Saturation Voltage:	2.3 V
Manufacturer:	ON Semiconductor
Pd - Power Dissipation:	384 W
Minimum Operating Temperature:	- 40 C
Brand:	ON Semiconductor
Package / Case:	TO-247
Product Category:	IGBT Transistors
Configuration:	Single
Mounting Style:	Through Hole
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Series:	NGTB40N120IHR
Continuous Collector Current at 25 C:	80 A
Factory Pack Quantity:	30
RoHS:	Details
Gate-Emitter Leakage Current:	100 nA
Collector- Emitter Voltage VCEO Max:	1200 V
Unit Weight:	0.229281 oz
Maximum Gate Emitter Voltage:	25 V

Datasheet： NGTB40N120IHRWG.pdf

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Stock code :	184304
Mfg name :	onsemi
MPN :	NGTB40N120IHRWG
Product description :	1200V,40A,IGBT FS2-RC Induction Heating

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