| SI4100DY-T1-E3 | ||
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| Product description : N-Channel 100 V 63 mOhm 20 nC SMT TrenchFET Power Mosfet - SOIC-8 | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| Power - Max | 6W |
|---|---|
| Rds On (Max) @ Id, Vgs | 63 mOhm @ 4.4A, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) |
| Part Status | Active |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Digi-Reel® |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| FET Feature | Standard |
| Supplier Device Package | 8-SO |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 600pF @ 50V |
| ECCN | EAR99 |
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- Replacement Products
- Associated Product
- P2P:A direct drop-in replacement or second source option. Possible minor parametric differences. No change required in most designs.
- Functional Equivalent:A direct replacement or second source option. Possible major parametric differences. Changes may be required in some designs.
- Contain: The functions that one IC can achieve contain the functions that another IC can achieve.
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