IRF5210SPBF specifications -Ameya360 electronic components purchase network


IRF5210SPBF

ACTIVE EAR99
Product description : IRF5210SPBF , P沟道 MOSFET 晶体管, 38 A, Vds=100 V, 3针 D2PAK封装
SPQ：1
Datasheet : IRF5210SPBF.pdf

Minimum Operating Temperature:	- 55 C
Rds On - Drain-Source Resistance:	60 mOhms
Pd - Power Dissipation:	3.8 W
Package / Case:	TO-252-3
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	SMD/SMT
Fall Time:	55 ns
Manufacturer:	Infineon
Factory Pack Quantity:	50
Brand:	Infineon Technologies
RoHS:	Details
Id - Continuous Drain Current:	- 40 A
Rise Time:	63 ns
Type:	HEXFET Power MOSFET
ECCN	EAR99
Qg - Gate Charge:	120 nC
Packaging:	Tube
Technology:	Si
Configuration:	Single
Unit Weight:	0.139332 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	14 ns
Transistor Polarity:	P-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	72 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 100 V
Transistor Type:	1 P-Channel
Maximum Operating Temperature:	+ 150 C

Datasheet： IRF5210SPBF.pdf

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Stock code :	179905
Mfg name :	Infineon Technologies
MPN :	IRF5210SPBF
Product description :	IRF5210SPBF , P沟道 MOSFET 晶体管, 38 A, Vds=100 V, 3针 D2PAK封装

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