IRF8010STRLPBF specifications -Ameya360 electronic components purchase network


IRF8010STRLPBF

ACTIVE D2PAK
Product description : Single N-Channel 100 V 15 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
SPQ：1
Datasheet : IRF8010STRLPBF.pdf

FET Feature	Standard
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power - Max	260W
Supplier Device Package	D2PAK
Gate Charge (Qg) @ Vgs	120nC @ 10V
FET Type	MOSFET N-Channel, Metal Oxide
Online Catalog	N-Channel Standard FETs
Family	FETs - Single
Vgs(th) (Max) @ Id	4V @ 250µA
Packaging	Cut Tape (CT)
Rds On (Max) @ Id, Vgs	15 mOhm @ 45A, 10V
PCN Assembly/Origin	Alternate Assembly Site 11/Nov/2013
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Product Training Modules	High Voltage Integrated Circuits (HVIC Gate Drivers)
Design Resources	IRF8010SPBF Saber Model IRF8010SPBF Spice Model
Series	HEXFET®
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	3830pF @ 25V
RoHS	Lead free / RoHS Compliant

Datasheet： IRF8010STRLPBF.pdf

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Stock code :	17929
Mfg name :	Infineon Technologies
MPN :	IRF8010STRLPBF
Product description :	Single N-Channel 100 V 15 mOhm 120 nC HEXFET® Power Mosfet - D2PAK

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