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| 产品描述：
Single N-Channel 55 V 0.16 Ohm 7 nC HEXFET® Power Mosfet - SOT-223
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| 数据手册： |
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| Power - Max | 1W |
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| Rds On (Max) @ Id, Vgs | 160 mOhm @ 1.9A, 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Ta) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Cut Tape (CT) |
| Package / Case | TO-261-4, TO-261AA |
| FET Feature | Standard |
| Supplier Device Package | SOT-223 |
| Gate Charge (Qg) @ Vgs | 11nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 190pF @ 25V |
| ECCN | EAR99 |
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