IRLU3410PBF specifications -Ameya360 electronic components purchase network


IRLU3410PBF

ACTIVE EAR99
Product description : Single N-Channel 100 V 105 mOhm 34 nC HEXFET® Power Mosfet - IPAK
SPQ：1
Datasheet : IRLU3410PBF.pdf

Qg - Gate Charge:	22.7 nC
Packaging:	Tube
Manufacturer:	Infineon
Transistor Polarity:	N-Channel
Technology:	Si
RoHS:	Details
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	100 V
Unit Weight:	0.139332 oz
Mounting Style:	Through Hole
Rds On - Drain-Source Resistance:	155 mOhms
Number of Channels:	1 Channel
Pd - Power Dissipation:	52 W
Factory Pack Quantity:	75
Brand:	Infineon / IR
Package / Case:	TO-251AA-3
Id - Continuous Drain Current:	15 A
Vgs - Gate-Source Voltage:	16 V
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： IRLU3410PBF.pdf

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Stock code :	170192
Mfg name :	Infineon Technologies
MPN :	IRLU3410PBF
Product description :	Single N-Channel 100 V 105 mOhm 34 nC HEXFET® Power Mosfet - IPAK

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