| NGTB50N120FL2WG | ||
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| 产品描述：
ON Semiconductor NGTB50N120FL2WG, N沟道 IGBT 晶体管, 100 A, Vce=1200 V, 1MHz, 3针 TO-247封装
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| 标准包装：1 | ||
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| Collector-Emitter Saturation Voltage: | 2.2 V |
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| Manufacturer: | ON Semiconductor |
| Pd - Power Dissipation: | 535 W |
| Minimum Operating Temperature: | - 55 C |
| Brand: | ON Semiconductor |
| Package / Case: | TO-247 |
| Product Category: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Maximum Operating Temperature: | + 175 C |
| Packaging: | Tube |
| Series: | NGTB50N120FL2 |
| Continuous Collector Current at 25 C: | 100 A |
| Factory Pack Quantity: | 30 |
| RoHS: | Details |
| Gate-Emitter Leakage Current: | 200 nA |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Unit Weight: | 0.229281 oz |
| Maximum Gate Emitter Voltage: | 30 V |
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