| SIR880DP-T1-GE3 | ||
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| Product description : SiHG20N50C Series 80 V 60 A 5.9 mOhm Power MOSFET - POWERPAK-SO-8 | ||
| SPQ：1 | ||
| Datasheet : |
- Specifications
- Product Attributes
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| Minimum Operating Temperature: | - 55 C |
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| Rds On - Drain-Source Resistance: | 5.9 mOhms |
| Pd - Power Dissipation: | 104 W |
| Tradename: | TrenchFET |
| Vgs th - Gate-Source Threshold Voltage: | 2.8 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Unit Weight: | 0.017870 oz |
| Forward Transconductance - Min: | 64 S |
| Series: | SIR |
| Factory Pack Quantity: | 3000 |
| Part # Aliases: | SIR880DP-GE3 |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Maximum Operating Temperature: | + 150 C |
| Qg - Gate Charge: | 49 nC |
| Packaging: | Reel |
| Technology: | Si |
| Package / Case: | SOIC-8 |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Manufacturer: | Vishay |
| Transistor Polarity: | N-Channel |
| Brand: | Vishay Semiconductors |
| RoHS: | Details |
| Id - Continuous Drain Current: | 60 A |
| Transistor Type: | 2 N-Channel |
| ECCN | EAR99 |
| Datasheet： |
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- Replacement Products
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- P2P:A direct drop-in replacement or second source option. Possible minor parametric differences. No change required in most designs.
- Functional Equivalent:A direct replacement or second source option. Possible major parametric differences. Changes may be required in some designs.
- Contain: The functions that one IC can achieve contain the functions that another IC can achieve.
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