SI2377EDS-T1-GE3 specifications -Ameya360 electronic components purchase network


SI2377EDS-T1-GE3

ACTIVE EAR99
Product description : Single P-Channel 20 V 61 mOhm Surface Mount TrenchFET Power Mosfet - TO-236
SPQ：1
Datasheet : SI2377EDS-T1-GE3.pdf

Qg - Gate Charge:	14 nC
Packaging:	Reel
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	SOT-23-3
Unit Weight:	0.050717 oz
Number of Channels:	1 Channel
Manufacturer:	Vishay
Transistor Polarity:	P-Channel
Brand:	Vishay Semiconductors
RoHS:	Details
Id - Continuous Drain Current:	- 4.4 A
Transistor Type:	1 P-Channel
ECCN	EAR99
Rds On - Drain-Source Resistance:	50 mOhms
Product:	MOSFET Small Signal
Pd - Power Dissipation:	1.8 W
Tradename:	TrenchFET
Configuration:	Single
Mounting Style:	SMD/SMT
Forward Transconductance - Min:	12 S
Series:	SI2
Factory Pack Quantity:	3000
Part # Aliases:	SI2377EDS-GE3
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 20 V
Maximum Operating Temperature:	+ 150 C

Datasheet： SI2377EDS-T1-GE3.pdf

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Stock code :	151468
Mfg name :	Vishay
MPN :	SI2377EDS-T1-GE3
Product description :	Single P-Channel 20 V 61 mOhm Surface Mount TrenchFET Power Mosfet - TO-236

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