| 2N5781 | ||
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| Product description : 2N5781 Series 80 V 3.5 A PNP Through Hole Silicon Transistor - TO-4 | ||
| SPQ：500 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
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| Emitter- Base Voltage VEBO: | 5 V |
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| Collector-Emitter Saturation Voltage: | 500 mV |
| Packaging: | Tray |
| DC Collector/Base Gain hfe Min: | 20 at 1 A at 2 V |
| Series: | 2N5781 |
| Minimum Operating Temperature: | - 65 C |
| Factory Pack Quantity: | 500 |
| Brand: | Central Semiconductor |
| Package / Case: | TO-39 |
| Collector- Emitter Voltage VCEO Max: | 65 |
| Configuration: | Single |
| Maximum Operating Temperature: | + 200 C |
| Maximum DC Collector Current: | 3.5 A |
| DC Current Gain hFE Max: | 150 at 1 A at 2 V |
| Collector- Base Voltage VCBO: | 80 V |
| Manufacturer: | Central Semiconductor |
| Pd - Power Dissipation: | 10 W |
| Transistor Polarity: | PNP |
| Technology: | Si |
| RoHS: | Details |
| Product Category: | Bipolar Transistors - BJT |
| Gain Bandwidth Product fT: | 60 MHz |
| Mounting Style: | Through Hole |
| ECCN | EAR99 |
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