STP11NK50Z
  • ACTIVE
  • TO-220AB
  • EAR99
Product description : Single N-Channel 500 V 125 W 68 nC Silicon Through Hole Mosfet - TO-220-3
SPQ:1
Datasheet : --
  • Specifications
  • Product Attributes
  • Documents
  • Product reviews
Power - Max 125W
Rds On (Max) @ Id, Vgs 520 mOhm @ 4.5A, 10V
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Part Status Active
Manufacturer STMicroelectronics
Series SuperMESH™
Vgs(th) (Max) @ Id 4.5V @ 100µA
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Tube
Package / Case TO-220-3
FET Feature Standard
Supplier Device Package TO-220AB
Gate Charge (Qg) @ Vgs 68nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET N-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Through Hole
Input Capacitance (Ciss) @ Vds 1390pF @ 25V
ECCN EAR99
You can comment after logging in.

Please enter the verification code in the image below:

verification code