| SI3552DV-T1-GE3 | ||
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| Product description : Dual N/P-Channel 30 V 0.175/0.360 Ohm 3.2/3.6 nC 1.15 W Silicon Mosfet SC-74 | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
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| Minimum Operating Temperature: | - 55 C |
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| Packaging: | Reel |
| Pd - Power Dissipation: | 1.15 W |
| Tradename: | TrenchFET |
| Configuration: | 1 N-Channel, 1 P-Channel |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Series: | SI3 |
| Factory Pack Quantity: | 3000 |
| Brand: | Vishay Semiconductors |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 200 mOhms |
| Product: | MOSFET Small Signal |
| Technology: | Si |
| Package / Case: | TSOP-6 |
| Vgs - Gate-Source Voltage: | 20 V |
| Unit Weight: | 0.000705 oz |
| Manufacturer: | Vishay |
| Transistor Polarity: | N-Channel, P-Channel |
| Part # Aliases: | SI3552DV-GE3 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 2.5 A |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| ECCN | EAR99 |
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