| SIJ478DP-T1-GE3 | ||
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| 产品描述：
N-Channel 80 V 8 mOhm 62.5 W SMT TrenchFET Power Mosfet-PowerPAK SO-8
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| 标准包装：1 | ||
| 数据手册： |
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| Product: | MOSFET |
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| Rds On - Drain-Source Resistance: | 8 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | SOIC-8 |
| Configuration: | Single |
| Unit Weight: | 0.017870 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 12 ns |
| Series: | SIJ |
| Factory Pack Quantity: | 3000 |
| Brand: | Vishay Semiconductors |
| RoHS: | Details |
| Id - Continuous Drain Current: | 60 A |
| Rise Time: | 8 ns |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Reel |
| Qg - Gate Charge: | 35.5 nC |
| Pd - Power Dissipation: | 62.5 W |
| Tradename: | TrenchFET |
| Vgs th - Gate-Source Threshold Voltage: | 2.6 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 7 ns |
| Manufacturer: | Vishay |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 32 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
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