STH270N8F7-2 specifications -Ameya360 electronic components purchase network


STH270N8F7-2

ACTIVE H²PAK EAR99
Product description : 80V,1.7mΩ,180A,N-Channel Power MOSFET
SPQ：1
Datasheet : STH270N8F7-2.pdf

Power - Max	315W
Rds On (Max) @ Id, Vgs	2.1 mOhm @ 90A, 10V
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Part Status	Active
Manufacturer	STMicroelectronics
Series	DeepGATE™, STripFET™ VII
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 175°C (TJ)
Packaging	Cut Tape (CT)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab) Variant
FET Feature	Standard
Supplier Device Package	H²PAK
Gate Charge (Qg) @ Vgs	193nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	13600pF @ 50V
ECCN	EAR99

Datasheet： STH270N8F7-2.pdf

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