IRF2804LPBF specifications -Ameya360 electronic components purchase network


IRF2804LPBF

ACTIVE EAR99
Product description : Single N-Channel 40 V 2.3 mOhm 160 nC HEXFET® Power Mosfet - TO-262
SPQ：1
Datasheet : IRF2804LPBF.pdf

Qg - Gate Charge:	160 nC
Packaging:	Tube
Manufacturer:	Infineon
Transistor Polarity:	N-Channel
Technology:	Si
RoHS:	Details
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	40 V
Unit Weight:	0.084199 oz
Mounting Style:	Through Hole
Rds On - Drain-Source Resistance:	2.3 mOhms
Number of Channels:	1 Channel
Pd - Power Dissipation:	330 W
Factory Pack Quantity:	50
Brand:	Infineon Technologies
Package / Case:	TO-262-3
Id - Continuous Drain Current:	280 A
Vgs - Gate-Source Voltage:	20 V
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： IRF2804LPBF.pdf

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Stock code :	136660
Mfg name :	Infineon Technologies
MPN :	IRF2804LPBF
Product description :	Single N-Channel 40 V 2.3 mOhm 160 nC HEXFET® Power Mosfet - TO-262

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