| VT10200C-E3/4W | ||
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| Product description : VT10200C-E3 10 A 200 V Trench MOS Barrier Schottky Rectifier - TO-220AB | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| Operating Temperature - Junction | -40°C ~ 150°C |
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| Supplier Device Package | TO-220AB |
| Part Status | Active |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | TMBS® |
| Mounting Type | Through Hole |
| Diode Configuration | 1 Pair Common Cathode |
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Current - Average Rectified (Io) (per Diode) | 5A |
| Diode Type | Schottky |
| Category | Discrete Semiconductor Products |
| Current - Reverse Leakage @ Vr | 150µA @ 200V |
| Family | Diodes - Rectifiers - Arrays |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Voltage - Forward (Vf) (Max) @ If | 1.6V @ 5A |
| ECCN | EAR99 |
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