IRF1405ZSTRLPBF
  • ACTIVE
  • D2PAK
  • EAR99
Product description : Single N-Channel 55 V 4.9 mOhm 180 nC HEXFET® Power Mosfet - TO-262
SPQ:1
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Power - Max 230W
Rds On (Max) @ Id, Vgs 4.9 mOhm @ 75A, 10V
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Part Status Active
Manufacturer Infineon Technologies
Series HEXFET®
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 175°C (TJ)
Packaging Digi-Reel®
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FET Feature Standard
Supplier Device Package D2PAK
Gate Charge (Qg) @ Vgs 180nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET N-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 4780pF @ 25V
ECCN EAR99
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